FP75R12KT4
- Manufacturer Infineon Technologies
- Part Number FP75R12KT4
- Description IGBT Modules 1.85V IGBT 4 PIM
- Category IGBT Modules
Specifications
| Package | Econo 3 |
| Packaging | Tray |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Part # Aliases | FP75R12KT4BOSA1 SP000355581 |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Brand | Infineon Technologies |
| Unit Weight | 10.582189 oz |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Product Type | IGBT Modules |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current at 25 C | 150 A |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 2.25 V |
| Configuration | 3-Phase |
| Subcategory | IGBTs |
| Mounting Style | Chassis Mount |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 385 W |
| Technology | Si |
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