FP50R12KE3
- Manufacturer Infineon Technologies
- Part Number FP50R12KE3
- Description IGBT Modules 1200V 50A PIM
- Category IGBT Modules
Specifications
| Package | EconoPIM3 |
| Packaging | Tray |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 400 nA |
| Width | 62 mm |
| Part # Aliases | FP50R12KE3BOSA1 SP000101740 |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Brand | Infineon Technologies |
| Unit Weight | 10.582189 oz |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Product Type | IGBT Modules |
| Maximum Operating Temperature | + 125 C |
| Continuous Collector Current at 25 C | 75 A |
| Length | 122 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 2.15 V |
| Configuration | Hex |
| Subcategory | IGBTs |
| Height | 17 mm |
| Mounting Style | Chassis Mount |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 270 W |
| Technology | Si |
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