FMB5551
- Manufacturer ON Semiconductor / Fairchild
- Part Number FMB5551
- Description Bipolar Transistors - BJT NPN Transistor General Purpose
- Category Bipolar Transistors - BJT
Specifications
| Package | SSOT-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 1.7 mm |
| Part # Aliases | FMB5551_NL |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor / Fairchild |
| DC Current Gain hFE Max | 250 |
| Unit Weight | 0.001270 oz |
| Collector- Emitter Voltage VCEO Max | 160 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 300 MHz |
| Length | 3 mm |
| Maximum DC Collector Current | 0.6 A |
| RoHS | Y |
| Continuous Collector Current | 0.1 A |
| Collector-Emitter Saturation Voltage | 0.2 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | FMB5551 |
| Height | 1 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 180 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 700 mW |
| DC Collector/Base Gain hfe Min | 80 |
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