FJI5603DTU
- Manufacturer ON Semiconductor / Fairchild
- Part Number FJI5603DTU
- Description Bipolar Transistors - BJT NPN Silicon
- Category Bipolar Transistors - BJT
Specifications
| Package | I2PAK-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 12 V |
| Width | 4.83 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| DC Collector/Base Gain hfe Min | 20 |
| DC Current Gain hFE Max | 20 |
| Unit Weight | |
| Collector- Emitter Voltage VCEO Max | 800 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 5 MHz |
| Length | 10.29 mm |
| Maximum DC Collector Current | 3 A |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.2 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | FJI5603D |
| Height | 9.65 mm |
| Collector- Base Voltage VCBO | 1.6 kV |
| Pd - Power Dissipation | 100000 mW |
| Brand | ON Semiconductor / Fairchild |
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