FGL60N100BNTD
- Manufacturer ON Semiconductor / Fairchild
- Part Number FGL60N100BNTD
- Description IGBT Transistors HIGH POWER
- Category IGBT Transistors
Specifications
| Package | TO-264-3 |
| Packaging | Tube |
| Min. Pack | 375 |
| Gate-Emitter Leakage Current | +/- 500 nA |
| Continuous Collector Current Ic Max | 60 A |
| Width | 5 mm |
| Part # Aliases | FGL60N100BNTD_NL |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 60 A |
| Product Category | IGBT Transistors |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.238311 oz |
| Collector- Emitter Voltage VCEO Max | 1000 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 20 mm |
| Maximum Gate Emitter Voltage | 25 V |
| RoHS | Y |
| Continuous Collector Current | 60 A |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | FGL60N100BNTD |
| Height | 26 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 180 W |
| Technology | Si |
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