FGD3N60UNDF
- Manufacturer ON Semiconductor / Fairchild
- Part Number FGD3N60UNDF
- Description IGBT Transistors 600V, 3A Short Circuit Rated IGBT
- Category IGBT Transistors
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 10 uA |
| Continuous Collector Current Ic Max | 3 A |
| Mounting Style | SMD/SMT |
| Continuous Collector Current at 25 C | 6 A |
| Product Category | IGBT Transistors |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.009184 oz |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 150 C |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 2.4 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Series | FGD3N60UNDF |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 60 W |
| Technology | Si |
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