FGD3050G2
- Manufacturer ON Semiconductor
- Part Number FGD3050G2
- Description IGBT Transistors 500V 27A 1.3V 300mJ
- Category IGBT Transistors
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Packaging | |
| Collector-Emitter Saturation Voltage | 1.3 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Gate-Emitter Leakage Current | 25 uA |
| Brand | ON Semiconductor |
| Pd - Power Dissipation | 150 W |
| Continuous Collector Current at 25 C | 27 A |
| Collector- Emitter Voltage VCEO Max | 500 V |
| Mounting Style | SMD/SMT |
| Maximum Gate Emitter Voltage | 10 V |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 40 C |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| RoHS | Y |
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