FGB5N60UNDF
- Manufacturer ON Semiconductor / Fairchild
- Part Number FGB5N60UNDF
- Description IGBT Transistors 600V 5A NPT IGBT
- Category IGBT Transistors
Specifications
| Package | TO-263AB-3 |
| Min. Pack | 1 |
| Packaging | |
| Collector-Emitter Saturation Voltage | 2.4 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Series | FGB5N60UNDF |
| Maximum Operating Temperature | + 150 C |
| Brand | ON Semiconductor / Fairchild |
| Pd - Power Dissipation | 73.5 W |
| Continuous Collector Current at 25 C | 10 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Unit Weight | |
| Mounting Style | SMD/SMT |
| Maximum Gate Emitter Voltage | 20 V |
| Gate-Emitter Leakage Current | +/- 10 nA |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Technology | Si |
| RoHS | Y |
Need pricing on FGB5N60UNDF?
Tell us your quantity and target price. We reply the same business day.