FGB20N60SFD
- Manufacturer ON Semiconductor / Fairchild
- Part Number FGB20N60SFD
- Description IGBT Transistors 600V 20A Field Stop
- Category IGBT Transistors
Specifications
| Package | TO-263AB |
| Min. Pack | 1 |
| Packaging | |
| Collector-Emitter Saturation Voltage | 2.8 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Gate-Emitter Leakage Current | 400 nA |
| Series | FGB20N60SFD |
| Brand | ON Semiconductor / Fairchild |
| Pd - Power Dissipation | 83 W |
| Continuous Collector Current at 25 C | 40 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Unit Weight | 0.046296 oz |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Transistors |
| Technology | Si |
| RoHS | Y |
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