FGAF20N60SMD
- Manufacturer ON Semiconductor / Fairchild
- Part Number FGAF20N60SMD
- Description IGBT Transistors 600 V 40 A 62.5 W
- Category IGBT Transistors
Specifications
| Package | TO-3PF |
| Packaging | Tube |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Series | FGAF20N60SMD |
| Maximum Operating Temperature | + 175 C |
| Brand | ON Semiconductor / Fairchild |
| Pd - Power Dissipation | 62.5 W |
| Continuous Collector Current at 25 C | 40 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Unit Weight | 0.245577 oz |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 20 V |
| Gate-Emitter Leakage Current | 400 nA |
| Minimum Operating Temperature | - 55 C |
| Product Type | IGBT Transistors |
| Technology | Si |
| RoHS | Y |
Need pricing on FGAF20N60SMD?
Tell us your quantity and target price. We reply the same business day.