FGA6560WDF
- Manufacturer ON Semiconductor / Fairchild
- Part Number FGA6560WDF
- Description IGBT Transistors FS3TIGBT TO3PN 60A 650V
- Category IGBT Transistors
Specifications
| Package | TO-3PN |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current Ic Max | 120 A |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 120 A |
| Product Category | IGBT Transistors |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.225789 oz |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 175 C |
| Maximum Gate Emitter Voltage | 30 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Series | FGA6560WDF |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 306 W |
| Technology | Si |
Need pricing on FGA6560WDF?
Tell us your quantity and target price. We reply the same business day.