FGA60N65SMD
- Manufacturer ON Semiconductor / Fairchild
- Part Number FGA60N65SMD
- Description IGBT Transistors 650V, 60A Field Stop IGBT
- Category IGBT Transistors
Specifications
| Package | TO-3PN |
| Packaging | Tube |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Gate-Emitter Leakage Current | 400 nA |
| Series | FGA60N65SMD |
| Brand | ON Semiconductor / Fairchild |
| Pd - Power Dissipation | 600 W |
| Continuous Collector Current at 25 C | 120 A |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Unit Weight | 0.225789 oz |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Transistors |
| Technology | Si |
| RoHS | Y |
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