FGA50S110P
- Manufacturer ON Semiconductor / Fairchild
- Part Number FGA50S110P
- Description IGBT Transistors 1100 V, 50 A Shorted-anode IGBT
- Category IGBT Transistors
Specifications
| Package | TO-3PN |
| Packaging | Tube |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 2.7 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Series | FGA50S110P |
| Maximum Operating Temperature | + 175 C |
| Brand | ON Semiconductor / Fairchild |
| Pd - Power Dissipation | 300 W |
| Continuous Collector Current at 25 C | 50 A |
| Collector- Emitter Voltage VCEO Max | 1100 V |
| Unit Weight | 0.225789 oz |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 25 V |
| Gate-Emitter Leakage Current | 500 nA |
| Minimum Operating Temperature | - 55 C |
| Product Type | IGBT Transistors |
| Technology | Si |
| RoHS | Y |
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