FF900R12IE4
- Manufacturer Infineon Technologies
- Part Number FF900R12IE4
- Description IGBT Modules IGBT 1200V 900A
- Category IGBT Modules
Specifications
| Packaging | Tray |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 400 nA |
| Collector-Emitter Saturation Voltage | 2.05 V |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Mounting Style | Chassis Mount |
| Technology | Si |
| Brand | Infineon Technologies |
| Continuous Collector Current at 25 C | 900 A |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Maximum Gate Emitter Voltage | 20 V |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 5.1 kW |
| Part # Aliases | FF900R12IE4BOSA1 SP000614712 |
| Product Type | IGBT Modules |
| Maximum Operating Temperature | + 150 C |
| RoHS | Y |
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