FF600R07ME4_B11
- Manufacturer Infineon Technologies
- Part Number FF600R07ME4_B11
- Description IGBT Modules IGBT Module 600A 650V
- Category IGBT Modules
Specifications
| Packaging | Tray |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Mounting Style | Chassis Mount |
| Technology | Si |
| Brand | Infineon Technologies |
| Continuous Collector Current at 25 C | 700 A |
| Collector-Emitter Saturation Voltage | 1.95 V |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Unit Weight | 12.169517 oz |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 1800 W |
| Part # Aliases | FF600R07ME4B11BOSA1 SP000725464 |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| RoHS | Y |
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