FDT86246L
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDT86246L
- Description MOSFET 150V 2A N-Channel Power Trench MOSFET
- Category MOSFET
Specifications
| Package | SOT-223-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Width | 3.5 mm |
| Qg - Gate Charge | 4.5 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.003951 oz |
| Number of Channels | 1 Channel |
| Tradename | PowerTrench |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 7.3 S |
| Id - Continuous Drain Current | 2 A |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 452 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 11 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDT86246L |
| Height | 1.8 mm |
| Packaging | |
| Typical Turn-On Delay Time | 4.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.2 W |
| Rise Time | 1.3 ns |
| Technology | Si |
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