FDS6990AS
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDS6990AS
- Description MOSFET 30V DUAL N-CH. FET 18 MO SO8
- Category MOSFET
Specifications
| Package | SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Width | 3.9 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | FDS6990AS_NL |
| Type | FET |
| Fall Time | 5 ns, 8 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.007408 oz |
| Number of Channels | 2 Channel |
| Tradename | PowerTrench SyncFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 29 S |
| Id - Continuous Drain Current | 7.5 A |
| Length | 4.9 mm |
| Rds On - Drain-Source Resistance | 17 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 24 ns, 14 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDS6990AS |
| Height | 1.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 8 ns, 9 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Rise Time | 5 ns, 8 ns |
| Technology | Si |
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