FDPF4N60NZ
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDPF4N60NZ
- Description MOSFET Dual 2A High-Speed Low-Side Gate Driver
- Category MOSFET
Specifications
| Package | TO-220FP-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 4.9 mm |
| Qg - Gate Charge | 8.3 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 12.8 ns |
| Mounting Style | Through Hole |
| Product | MOSFET |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.080072 oz |
| Number of Channels | 2 Channel |
| Tradename | UniFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 3.3 S |
| Id - Continuous Drain Current | 3.8 A |
| Length | 10.36 mm |
| Rds On - Drain-Source Resistance | 2.5 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 30.2 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDPF4N60NZ |
| Height | 16.07 mm |
| Typical Turn-On Delay Time | 12.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 28 W |
| Rise Time | 15.1 ns |
| Technology | Si |
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