FDN5632N-F085
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDN5632N-F085
- Description MOSFET Trans MOS N-Ch 60V 1.7A
- Category MOSFET
Specifications
| Package | SSOT-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 98 mOhms |
| Width | 1.4 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | FDN5632N_F085 |
| Type | Power Trench MOSFET |
| Fall Time | 1.3 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.001058 oz |
| Number of Channels | 1 Channel |
| Tradename | UltraFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 1.6 A |
| Length | 2.9 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 5.2 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDN5632N_F085 |
| Height | 1.12 mm |
| Packaging | |
| Typical Turn-On Delay Time | 15 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.1 W |
| Rise Time | 1.7 ns |
| Technology | Si |
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