FDN306P
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDN306P
- Description MOSFET P-Ch PowerTrench Specified 1.8V
- Category MOSFET
Specifications
| Package | SSOT-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Transistor Polarity | P-Channel |
| Width | 1.4 mm |
| Vgs - Gate-Source Voltage | 8 V |
| Part # Aliases | FDN306P_NL |
| Type | MOSFET |
| Fall Time | 10 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.001058 oz |
| Number of Channels | 1 Channel |
| Tradename | PowerTrench |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 10 S |
| Id - Continuous Drain Current | 2.6 A |
| Length | 2.9 mm |
| Rds On - Drain-Source Resistance | 40 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 38 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDN306P |
| Height | 1.12 mm |
| Packaging | |
| Typical Turn-On Delay Time | 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Rise Time | 10 ns |
| Technology | Si |
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