FDMS3669S
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDMS3669S
- Description MOSFET 30V Asymmetric Dual N-Channel Pwr Trench
- Category MOSFET
Specifications
| Package | Power-56-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 5 mm |
| Qg - Gate Charge | 34 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 3 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.006032 oz |
| Number of Channels | 2 Channel |
| Tradename | Power Stage PowerTrench |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 113 S |
| Id - Continuous Drain Current | 60 A |
| Length | 6 mm |
| Rds On - Drain-Source Resistance | 10 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 24 ns |
| Subcategory | MOSFETs |
| Series | FDMS3669S |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 9 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.5 W |
| Rise Time | 3 ns |
| Technology | Si |
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