FDMS3600S
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDMS3600S
- Description MOSFET 25V Dual N-Channel PowerTrench MOSFET
- Category MOSFET
Specifications
| Package | Power-56-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V, 1.5 V |
| Width | 5 mm |
| Qg - Gate Charge | 19 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 1.8 ns, 3.9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.006032 oz |
| Number of Channels | 2 Channel |
| Tradename | Power Stage PowerTrench SyncFet |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 67 S, 171 S |
| Id - Continuous Drain Current | 15 A, 30 A |
| Length | 6 mm |
| Rds On - Drain-Source Resistance | 5.6 mOhms, 1.6 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 19 ns, 38 ns |
| Subcategory | MOSFETs |
| Series | FDMS3600S |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 7.9 ns, 13 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.2 W, 2.5 W |
| Rise Time | 2 ns, 5.3 ns |
| Technology | Si |
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