FDMD8900
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDMD8900
- Description MOSFET PT8 30/12V Dual Nch Power Trench MOSFET
- Category MOSFET
Specifications
| Package | PQFN-12 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 0.8 mV |
| Width | 3.3 mm |
| Qg - Gate Charge | 25 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Fall Time | 2.4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.002904 oz |
| Number of Channels | 2 Channel |
| Tradename | PowerTrench Power Clip |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Id - Continuous Drain Current | 66 A |
| Length | 5 mm |
| Rds On - Drain-Source Resistance | 3.4 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 25 ns |
| Subcategory | MOSFETs |
| Series | FDMD8900 |
| Height | 0.8 mm |
| Packaging | |
| Typical Turn-On Delay Time | 8.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.1 W |
| Rise Time | 2.3 ns |
| Technology | Si |
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