FDMD8560L
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDMD8560L
- Description MOSFET 60V Dual N-Channel PowerTrench MOSFET
- Category MOSFET
Specifications
| Package | Power 5 x 6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 3.3 mm |
| Qg - Gate Charge | 92 nC, 92 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 11 ns, 11 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.003346 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 98 S, 98 S |
| Id - Continuous Drain Current | 22 A |
| Length | 3.3 mm |
| Rds On - Drain-Source Resistance | 5.4 mOhms, 5.4 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 57 ns, 57 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDMD8560L |
| Height | 0.8 mm |
| Packaging | |
| Typical Turn-On Delay Time | 20 ns, 20 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.2 W |
| Rise Time | 15 ns, 15 ns |
| Technology | Si |
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