FDMC8200
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDMC8200
- Description MOSFET DUAL N-CHANNEL PowerTrench
- Category MOSFET
Specifications
| Package | Power-33-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Width | 3 mm |
| Qg - Gate Charge | 7.3 nC, 16 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Type | Power Trench MOSFET |
| Fall Time | 1.3 ns, 6 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.006561 oz |
| Number of Channels | 2 Channel |
| Tradename | PowerTrench |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 29 S, 56 S |
| Id - Continuous Drain Current | 18 A |
| Length | 3 mm |
| Rds On - Drain-Source Resistance | 16 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 35 ns, 38 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDMC8200 |
| Height | 0.8 mm |
| Packaging | |
| Typical Turn-On Delay Time | 11 ns, 13 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.9 W, 2.2 W |
| Rise Time | 3.1 ns, 4 ns |
| Technology | Si |
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