FDMB2308PZ
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDMB2308PZ
- Description MOSFET Dual Com Drain -20V P-Channel Pwr Trench
- Category MOSFET
Specifications
| Package | MicroFET-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 900 mV |
| Width | 2 mm |
| Qg - Gate Charge | 22 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Fall Time | 58 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | |
| Number of Channels | 2 Channel |
| Tradename | PowerTrench |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 P-Channel |
| Forward Transconductance - Min | 29 S |
| Id - Continuous Drain Current | 7 A |
| Length | 3 mm |
| Rds On - Drain-Source Resistance | 36 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 74 ns |
| Subcategory | MOSFETs |
| Series | FDMB2308PZ |
| Height | 0.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 14 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.2 W |
| Rise Time | 33 ns |
| Technology | Si |
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