FDG6332C
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDG6332C
- Description MOSFET 20V N&P-Channel Power Trench
- Category MOSFET
Specifications
| Package | SOT-323-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel, P-Channel |
| Width | 1.25 mm |
| Vgs - Gate-Source Voltage | 12 V |
| Part # Aliases | FDG6332C_NL |
| Type | MOSFET |
| Fall Time | 7 ns, 14 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.000988 oz |
| Number of Channels | 2 Channel |
| Tradename | PowerTrench |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 2.8 S, 1.8 S |
| Id - Continuous Drain Current | 700 mA |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 300 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 9 ns, 6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDG6332C |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5 ns, 5.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 mW |
| Rise Time | 7 ns, 14 ns |
| Technology | Si |
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