FDD10N20LZTM
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDD10N20LZTM
- Description MOSFET 200V N-Channel MOSFET, UniFET
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Width | 6.22 mm |
| Qg - Gate Charge | 12 nC |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.009184 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 8 S |
| Id - Continuous Drain Current | 7.6 A |
| Length | 6.73 mm |
| Rds On - Drain-Source Resistance | 300 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Series | FDD10N20LZ |
| Height | 2.39 mm |
| Packaging | |
| Pd - Power Dissipation | 56 W |
| Technology | Si |
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