FDC642P-F085
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDC642P-F085
- Description MOSFET P-CHANNEL 2.5V PowerTrench MOS
- Category MOSFET
Specifications
| Package | SSOT-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Rds On - Drain-Source Resistance | 65 mOhms |
| Width | 1.6 mm |
| Vgs - Gate-Source Voltage | 8 V |
| Part # Aliases | FDC642P_F085 |
| Type | Power Trench MOSFET |
| Fall Time | 35 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.001270 oz |
| Number of Channels | 1 Channel |
| Tradename | PowerTrench |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 9 S |
| Id - Continuous Drain Current | 4 A |
| Length | 2.9 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 26 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDC642P_F085 |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.6 W |
| Rise Time | 19 ns |
| Technology | Si |
Need pricing on FDC642P-F085?
Tell us your quantity and target price. We reply the same business day.