FDBL0260N100
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDBL0260N100
- Description MOSFET N-Channel Power Trench MOSFET
- Category MOSFET
Specifications
| Package | H-PSOF-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 9.9 mm |
| Qg - Gate Charge | 83 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 19 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.029985 oz |
| Number of Channels | 1 Channel |
| Tradename | PowerTrench |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 170 S |
| Id - Continuous Drain Current | 200 A |
| Length | 10.48 mm |
| Rds On - Drain-Source Resistance | 2.6 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 47 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDBL0260N100 |
| Height | 2.4 mm |
| Packaging | |
| Typical Turn-On Delay Time | 26 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 34 ns |
| Technology | Si |
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