FDB86363-F085
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDB86363-F085
- Description MOSFET N-Channel Power Trench MOSFET
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 2 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 9.65 mm |
| Qg - Gate Charge | 131 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | FDB86363_F085 |
| Fall Time | 40 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.046296 oz |
| Number of Channels | 1 Channel |
| Tradename | PowerTrench |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 110 A |
| Length | 10.67 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 64 ns |
| Subcategory | MOSFETs |
| Series | FDB86363_F085 |
| Height | 4.83 mm |
| Packaging | |
| Typical Turn-On Delay Time | 38 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 W |
| Rise Time | 129 ns |
| Technology | Si |
Need pricing on FDB86363-F085?
Tell us your quantity and target price. We reply the same business day.