FDB20N50F
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDB20N50F
- Description MOSFET UF 500V 260MOHM F D2PAK
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 9.65 mm |
| Qg - Gate Charge | 50 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 60 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.062153 oz |
| Number of Channels | 1 Channel |
| Tradename | UniFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 25 S |
| Id - Continuous Drain Current | 20 A |
| Length | 10.67 mm |
| Rds On - Drain-Source Resistance | 260 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 100 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDB20N50F |
| Height | 4.83 mm |
| Packaging | |
| Typical Turn-On Delay Time | 45 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 120 ns |
| Technology | Si |
Need pricing on FDB20N50F?
Tell us your quantity and target price. We reply the same business day.