FDB1D7N10CL7
- Manufacturer ON Semiconductor
- Part Number FDB1D7N10CL7
- Description MOSFET MOSFET 100V 268A 1.7 mOhm
- Category MOSFET
Specifications
| Package | TO-263-7 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 163 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 36 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 237 S |
| Id - Continuous Drain Current | 268 A |
| Rds On - Drain-Source Resistance | 1.7 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 85 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 39 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 33 ns |
| Technology | Si |
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