FDB120N10
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDB120N10
- Description MOSFET 100V N-Chan 12Mohm PowerTrench
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Width | 9.65 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Type | Power Trench MOSFET |
| Fall Time | 15 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.046296 oz |
| Number of Channels | 1 Channel |
| Tradename | PowerTrench |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 105 S |
| Id - Continuous Drain Current | 74 A |
| Length | 10.67 mm |
| Rds On - Drain-Source Resistance | 9.7 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 39 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDB120N10 |
| Height | 4.83 mm |
| Packaging | |
| Typical Turn-On Delay Time | 27 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 170 W |
| Rise Time | 105 ns |
| Technology | Si |
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