FDB024N08BL7
- Manufacturer ON Semiconductor / Fairchild
- Part Number FDB024N08BL7
- Description MOSFET 80V N-Channel PowerTrench MOSFET
- Category MOSFET
Specifications
| Package | TO-263-7 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Width | 9.4 mm |
| Qg - Gate Charge | 137 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 41 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.046279 oz |
| Number of Channels | 1 Channel |
| Tradename | PowerTrench |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 227 S |
| Id - Continuous Drain Current | 229 A |
| Length | 10.2 mm |
| Rds On - Drain-Source Resistance | 2.4 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 41 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FDB024N08BL7 |
| Height | 4.7 mm |
| Packaging | |
| Typical Turn-On Delay Time | 47 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 246 W |
| Rise Time | 66 ns |
| Technology | Si |
Need pricing on FDB024N08BL7?
Tell us your quantity and target price. We reply the same business day.