FD150R12RT4
- Manufacturer Infineon Technologies
- Part Number FD150R12RT4
- Description IGBT Modules IGBT 1200V 150A
- Category IGBT Modules
Specifications
| Packaging | Tray |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current at 25 C | 150 A |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Mounting Style | SMD/SMT |
| Brand | Infineon Technologies |
| Collector-Emitter Saturation Voltage | 2.15 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Unit Weight | 5.361642 oz |
| Maximum Gate Emitter Voltage | 20 V |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 790 W |
| Part # Aliases | FD150R12RT4HOSA1 SP000711858 |
| Product Type | IGBT Modules |
| Maximum Operating Temperature | + 150 C |
| RoHS | Y |
Need pricing on FD150R12RT4?
Tell us your quantity and target price. We reply the same business day.