FCX558QTA
- Manufacturer Diodes Incorporated
- Part Number FCX558QTA
- Description Bipolar Transistors - BJT Pwr Hi Voltage Transistor SOT89 T&R 1K
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-89-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 7 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 300 |
| Unit Weight | 0.001764 oz |
| Collector- Emitter Voltage VCEO Max | - 400 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 50 MHz |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | - 200 mA |
| Continuous Collector Current | - 200 mA |
| Collector-Emitter Saturation Voltage | - 0.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | FCX558Q |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 400 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 2 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 100 |
Need pricing on FCX558QTA?
Tell us your quantity and target price. We reply the same business day.