FCMT299N60
- Manufacturer ON Semiconductor / Fairchild
- Part Number FCMT299N60
- Description MOSFET SF2 600V 299MOHM F PQFN88
- Category MOSFET
Specifications
| Package | Power-88-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Width | 8 mm |
| Qg - Gate Charge | 39 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 7 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.015839 oz |
| Number of Channels | 1 Channel |
| Tradename | SuperFET II |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 12 S |
| Id - Continuous Drain Current | 12 A |
| Length | 8 mm |
| Rds On - Drain-Source Resistance | 299 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 51 ns |
| Subcategory | MOSFETs |
| Series | FCMT299N60 |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 19 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 W |
| Rise Time | 9 ns |
| Technology | Si |
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