FCMT199N60
- Manufacturer ON Semiconductor / Fairchild
- Part Number FCMT199N60
- Description MOSFET 199mohm 600V SuperFET2
- Category MOSFET
Specifications
| Package | Power-88-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Width | 8 mm |
| Qg - Gate Charge | 57 nC |
| Vgs - Gate-Source Voltage | 20 V, 30 V |
| Fall Time | 5 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.015839 oz |
| Tradename | SuperFET II |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 20 S |
| Id - Continuous Drain Current | 20.2 A |
| Length | 8 mm |
| Rds On - Drain-Source Resistance | 199 mOhms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 64 ns |
| Subcategory | MOSFETs |
| Series | FCMT199N60 |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 20 ns |
| Minimum Operating Temperature | - 50 C |
| Pd - Power Dissipation | 208 W |
| Rise Time | 10 ns |
| Technology | Si |
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