FCH041N65F-F085
- Manufacturer ON Semiconductor / Fairchild
- Part Number FCH041N65F-F085
- Description MOSFET 650V N-Channel SuperFET II MOSFET
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 96 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 4.82 mm |
| Qg - Gate Charge | 234 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | FCH041N65F_F085 |
| Fall Time | 8 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.225401 oz |
| Number of Channels | 1 Channel |
| Tradename | SuperFET II |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 76 A |
| Length | 15.87 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 183 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | FCH041N65F_F085 |
| Height | 20.82 mm |
| Typical Turn-On Delay Time | 55 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 595 W |
| Rise Time | 39 ns |
| Technology | Si |
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