ES6U2T2R
- Manufacturer ROHM Semiconductor
- Part Number ES6U2T2R
- Description MOSFET ULTRA-LOW OHMIC RESISTOR; 3/4W; PMR18(1206) PKG
- Category MOSFET
Specifications
| Package | SOT-563T-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel, SBD |
| Vgs th - Gate-Source Threshold Voltage | 300 mV |
| Qg - Gate Charge | 1.8 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | ES6U2 |
| Fall Time | 3 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 0.000106 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 1.5 A |
| Rds On - Drain-Source Resistance | 130 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 20 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | ES6U2 |
| Packaging | |
| Typical Turn-On Delay Time | 5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 800 mW |
| Rise Time | 5 ns |
| Technology | Si |
Need pricing on ES6U2T2R?
Tell us your quantity and target price. We reply the same business day.