EMX3T2R
- Manufacturer ROHM Semiconductor
- Part Number EMX3T2R
- Description Bipolar Transistors - BJT DUAL NPN 50V 150MA
- Category Bipolar Transistors - BJT
Specifications
| Package | EMT-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 7 V |
| Width | 1.2 mm |
| Part # Aliases | EMX3 |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ROHM Semiconductor |
| DC Current Gain hFE Max | 560 |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 180 MHz |
| Length | 1.6 mm |
| Maximum DC Collector Current | 0.15 A |
| RoHS | Y |
| Continuous Collector Current | 150 mA |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | EMX3 |
| Height | 0.5 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 mW |
| DC Collector/Base Gain hfe Min | 120 |
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