EMH4T2R
- Manufacturer ROHM Semiconductor
- Part Number EMH4T2R
- Description Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | EMT-6 |
| Min. Pack | 1 |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 1.2 mm |
| Part # Aliases | EMH4 |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 100 |
| DC Current Gain hFE Max | 600 |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Length | 1.6 mm |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Subcategory | Transistors |
| Series | EMH4 |
| Height | 0.5 mm |
| Packaging | |
| Pd - Power Dissipation | 150 mW |
| Typical Input Resistor | 10 kOhms |
| Brand | ROHM Semiconductor |
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