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DZT751-13

  • Manufacturer Diodes Incorporated
  • Part Number DZT751-13
  • Description Bipolar Transistors - BJT PNP 1W
  • Category Bipolar Transistors - BJT
Specifications
Package SOT-223-4
Min. Pack 1
Transistor Polarity PNP
Emitter- Base Voltage VEBO - 5 V
Width 3.5 mm
Mounting Style SMD/SMT
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 70
Unit Weight 0.003951 oz
Collector- Emitter Voltage VCEO Max - 60 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 145 MHz
Length 6.5 mm
Maximum DC Collector Current - 6 A
RoHS Y
Collector-Emitter Saturation Voltage - 600 mV
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series DZT751
Height 1.6 mm
Packaging
Collector- Base Voltage VCBO - 80 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 2000 mW
DC Collector/Base Gain hfe Min 40 at 2 A, 2 V

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