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DZT591C-13

  • Manufacturer Diodes Incorporated
  • Part Number DZT591C-13
  • Description Bipolar Transistors - BJT 1W -60V
  • Category Bipolar Transistors - BJT
Specifications
Package SOT-223-4
Packaging Reel
Min. Pack 2,500
Transistor Polarity PNP
Emitter- Base Voltage VEBO - 5 V
Width 3.7 mm
Mounting Style SMD/SMT
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 300
Unit Weight 0.003951 oz
Collector- Emitter Voltage VCEO Max - 60 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 150 MHz
Length 6.7 mm
Maximum DC Collector Current - 2 A
RoHS Y
Continuous Collector Current - 1 A
Collector-Emitter Saturation Voltage - 0.6 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series DZT591
Height 1.65 mm
Collector- Base Voltage VCBO - 80 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1 W
DC Collector/Base Gain hfe Min 15

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