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DXTP3C60PSQ-13

  • Manufacturer Diodes Incorporated
  • Part Number DXTP3C60PSQ-13
  • Description Bipolar Transistors - BJT 60V PNP Medium Pwr Low Sat Transistor
  • Category Bipolar Transistors - BJT
Specifications
Package PowerDI5060-8
Min. Pack 1
Transistor Polarity PNP
Emitter- Base Voltage VEBO - 7 V
Moisture Sensitive Yes
Packaging
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
Unit Weight 0.003422 oz
Collector- Emitter Voltage VCEO Max - 60 V
Configuration Single
Maximum Operating Temperature + 175 C
Gain Bandwidth Product fT 135 MHz
Qualification AEC-Q101
Maximum DC Collector Current - 3 A
RoHS Y
Continuous Collector Current - 3 A
Collector-Emitter Saturation Voltage - 240 mV
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Mounting Style SMD/SMT
Collector- Base Voltage VCBO - 60 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 5 W
Technology Si
DC Collector/Base Gain hfe Min 35

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