DXTN07060BFG-7
- Manufacturer Diodes Incorporated
- Part Number DXTN07060BFG-7
- Description Bipolar Transistors - BJT Pwr Mid Perf Transistor
- Category Bipolar Transistors - BJT
Specifications
| Package | PowerDI3333-8 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 7 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 300 |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Gain Bandwidth Product fT | 175 MHz |
| Maximum DC Collector Current | 3 A |
| RoHS | Y |
| Continuous Collector Current | 3 A |
| Collector-Emitter Saturation Voltage | 200 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 80 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 3.1 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 100 |
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