DXT13003EK-13
- Manufacturer Diodes Incorporated
- Part Number DXT13003EK-13
- Description Bipolar Transistors - BJT 100V NPN 460V Trans 1.5A 3W 4MHz 400mV
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 9 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 30 |
| Unit Weight | 0.063493 oz |
| Collector- Emitter Voltage VCEO Max | 460 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 4 MHz |
| Maximum DC Collector Current | 3 A |
| RoHS | Y |
| Continuous Collector Current | 1.5 A |
| Collector-Emitter Saturation Voltage | 400 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | DXT13003 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 3.9 W |
| DC Collector/Base Gain hfe Min | 5 at 1 A, 2 V |
Need pricing on DXT13003EK-13?
Tell us your quantity and target price. We reply the same business day.