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DVR5V0W-7

  • Manufacturer Diodes Incorporated
  • Part Number DVR5V0W-7
  • Description Bipolar Transistors - BJT Complex Array
  • Category Bipolar Transistors - BJT
Specifications
Package SOT-363-6
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 5 V
Width 1.35 mm
Mounting Style SMD/SMT
Product Category Bipolar Transistors - BJT
DC Collector/Base Gain hfe Min 150 at 100 mA, 1 V
Unit Weight 0.000212 oz
Collector- Emitter Voltage VCEO Max 18 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 100 MHz
Length 2.2 mm
Maximum DC Collector Current 1 A
RoHS Y
Collector-Emitter Saturation Voltage 500 mV
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series DVR5V
Height 1 mm
Packaging
Collector- Base Voltage VCBO 45 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 200 mW
Brand Diodes Incorporated

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