DTM3A25P20NFDB-7
- Manufacturer Diodes Incorporated
- Part Number DTM3A25P20NFDB-7
- Description MOSFET Transistor Array
- Category MOSFET
Specifications
| Package | U-DFN2020-B-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel, PNP |
| Vgs th - Gate-Source Threshold Voltage | 500 mV |
| Qg - Gate Charge | 736.6 pC |
| Vgs - Gate-Source Voltage | 6 V |
| Fall Time | 12.3 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.000238 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 630 mA |
| Rds On - Drain-Source Resistance | 300 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 26.7 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 5.1 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.47 W |
| Rise Time | 7.4 ns |
| Technology | Si |
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